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Solid State Tes...

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  • Question 1
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    A metallic crystal crystallizes into a lattice containing a sequence of layers $$ABABAB$$.... Any packing of spheres leaves out voids in the lattice. What percentage by volume of this lattice is empty space ?

  • Question 2
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    Calculate the density (in g cm$$^{-3}$$) of diamond from the fact that it has face-centered cubic structure with two atoms per lattice point and unit cell edge length of $$3.569\, \mathring A$$.

  • Question 3
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    A metal crystallizes in bcc lattice. The percent fraction of edge length not covered by atom is :

  • Question 4
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    A metal crystallizes into two cubic phases, face-centered cubic and body-centered cubic which have unit cell lengths as $$3.5\ \mathring A$$ and $$3.0\ \mathring {A} $$, respectively. Calculate the ratio of densities of fcc and bcc.

  • Question 5
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    The packing efficiency of a two-dimensional square unit cell shown is __________.

  • Question 6
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    An element crystallizes in a structure having FCC unit cell of an edge length $$200$$ pm. Calculate the density (in g cm$$^{-3}$$) if $$200$$ g of this element contain $$5\, \times\, 10^{24}$$ atoms.

  • Question 7
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    The $$\gamma$$-form of iron has fcc structure (edge length $$=386$$ pm) and $$\beta$$-form has bcc structure (edge length $$=290$$ pm). The ratio of density in $$\gamma$$-form to that in $$\beta$$-form is :

  • Question 8
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    If the lattice parameter of Si is $$5.43$$ $$\mathring {A} $$ and the mass of Si atom is $$28.08 \times 1.66 \times 10^{-27}$$ kg, the density of silicon in kg m$$^{-3}$$ is:

    [Given: Silicon has a diamond cubic structure.]

  • Question 9
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    An element has a FCC structure with edge length 200 pm. Calculate density if 200 g of this element contains $$24 \times 10^{23}$$ atoms.

  • Question 10
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    Directions For Questions

    The number of Schottky defects $$\left(n\right)$$ present in an ionic containing $$N$$ ions at temperature $$T$$ is given by $$n = N{ e }^{ -{ E }/{ 2kT } }$$ where $$E$$ is energy required to create $$n$$ Schottky defects and $$k$$ is Boltzmann constant. The number of Frenkel defects $$\left(n\right)$$ in an ionic crystal having $$N$$ ions is given by $$n={ \left( \dfrac { N }{ { N }_{ i } }  \right)  }^{ \dfrac { 1 }{ 2 }  }{ e }^{ -{ E }/{ 2kT } }$$ where $$E$$ is energy required to create $$n$$ Frenkel defects and $${N}_{i}$$ is the number of interstitial sites.

    ...view full instructions

    Which of the following does not posses any plane of symmetry?

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