Electronic Devices and Communication Systems Test

Result

Electronic Devices and Communication Systems Test - 3

Score
-
out of -
Rank
-
out of -

TIME Taken - -

SHARING IS CARING

If our Website helped you a little, then kindly spread our voice using Social Networks. Spread our word to your readers, friends, teachers, students & all those close ones who deserve to know what you know now.

Weekly Quiz Competition

Question 1
1 / -0

The following question has four choices out of which ONLY ONE is correct.

If the forward voltage in a diode increases, the width of the depletion region

A
increases

B
decreases

C
fluctuates

D
does not change

Solution

With the increase in forward bias, the barrier potential decreases because of which the current increases. Hence, width of the depletion region decreases .
Question 2
1 / -0

The minimum potential difference between the base and emitter required to switch a silicon transistor 'ON' is approximately

A
1 V

B
3 V

C
5 V

D
4.2 V

Solution

The minimum potential difference between the base and emitter required to switch a silicon transistor 'ON' is approximately 1 V. To switch on the transistor, the emitter-base junction of a transistor is forward biased while collector-base junction is reverse biased. The cut-off voltage for silicon is 1 V. So to switch on a silicon transistor, a potential difference of 1 V approximately is required between the base and emitter.