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Semiconductor Devices Test - 27

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Semiconductor Devices Test - 27
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Weekly Quiz Competition
  • Question 1
    4 / -1
    For a transistor amplifier, the voltage gain
  • Question 2
    4 / -1
    A working transistor with its three legs marked P, Q and R is tested using a multimeter. No conduction is found between P and Q. By connecting the common (negative) terminal of the multimeter to R and the other (positive) terminal to P or Q, some resistance is seen on the multimeter. Which of the following is true for the transistor?
  • Question 3
    4 / -1
    Consider a p-n junction as a capacitor, formed with p and n materials acting as thin metal electrodes and depletion layer width acting as separation between them. Basing on this, assume that a n -p-n transistor, is working as an amplifier in CE configuration. If C1 and C2 are the base-emitter and collector-emitter junction capacitances, then
  • Question 4
    4 / -1
    Which of the following is correct, about doping in a transistor?
  • Question 5
    4 / -1
    The current voltage relation of diode is given by I = (e1000V/T – 1) mA, where the applied voltage V is in volt and the temperature T is in kelvin. If a student makes an error measuring ± 0.01V while measuring the current of 5 mA at 300 K, what will be the error in the value of current in mA?
    Solution

  • Question 6
    4 / -1
    Two identical p-n junction are connected in series with battery in three ways. The potential difference across the two p-n junction are equal in

  • Question 7
    4 / -1
    In a p-n junction diode are not connected to any circuit
  • Question 8
    4 / -1
    A p-n junction diode (D) shown in the figure, can act as a rectifier. An alternating current source (V) is connected in the circuit.

  • Question 9
    4 / -1
    Which of the following statements is not correct when a junction diode is in forward bias?
  • Question 10
    4 / -1
    A p-n junction has acceptor impurity concentration of 17 cm-3 in the P side and donor impurity concentration of 1016 cm-3 in the N side. What is the contact potential at the junction? (kT = thermal energy, intrinsic carrier concentration ni = 1.4 × 1016 cm-3 )
    Solution

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