Semiconductor D...

For a transistor amplifier, the voltage gain

A working transistor with its three legs marked P, Q and R is tested using a multimeter. No conduction is found between P and Q. By connecting the common (negative) terminal of the multimeter to R and the other (positive) terminal to P or Q, some resistance is seen on the multimeter. Which of the following is true for the transistor?

Consider a p-n junction as a capacitor, formed with p and n materials acting as thin metal electrodes and depletion layer width acting as separation between them. Basing on this, assume that a n -p-n transistor, is working as an amplifier in CE configuration. If C₁ and C₂ are the base-emitter and collector-emitter junction capacitances, then

Which of the following is correct, about doping in a transistor?

The current voltage relation of diode is given by I = (e^1000V/T – 1) mA, where the applied voltage V is in volt and the temperature T is in kelvin. If a student makes an error measuring ± 0.01V while measuring the current of 5 mA at 300 K, what will be the error in the value of current in mA?

Two identical p-n junction are connected in series with battery in three ways. The potential difference across the two p-n junction are equal in

In a p-n junction diode are not connected to any circuit

A p-n junction diode (D) shown in the figure, can act as a rectifier. An alternating current source (V) is connected in the circuit.

Which of the following statements is not correct when a junction diode is in forward bias?

A p-n junction has acceptor impurity concentration of 17 cm^-3 in the P side and donor impurity concentration of 10¹⁶ cm^-3 in the N side. What is the contact potential at the junction? (kT = thermal energy, intrinsic carrier concentration n_i = 1.4 × 10¹⁶ cm^-3 )