Semiconductor E...

The curve represents the $$I-V$$ characteristics of which optoelectronic device?

What is the reason to operate the photodiodes in reverse bias? 

In                 ,  excess minority carriers recombine with majority carriers near the p-n junction.

 The thickness of depletion region is of the order of 

When an external voltage ($$V$$) is applied across the diode in reverse bias with a barrier potential of $$V_o$$, the effect barrier height under reverse bias is 

Across the depletion region, there is a barrier potential which 

In the figure, the numbers 1, 2, 3 represent barrier potential ($$V_o$$) of a p-n junction under forward bias

For creating a $$p-n$$ junction, 

Due to the concentration gradient across p-, and n- sides, the motion of charge carries gives rise to_______ current across the junction

 The direction of the applied voltage ($$V$$) is opposite to the built-in potential $$V_o$$ .  The effective barrier height under forward bias is