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Semiconductor Electronics: Materials, Devices and Simple Circuits Test 39

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Semiconductor Electronics: Materials, Devices and Simple Circuits Test 39
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  • Question 1
    1 / -0
    The output of a OR gate is $$1$$ :
    Solution
    The output of a OR gate is $$\gamma =A+B$$.
  • Question 2
    1 / -0
    A rod of a certain metal is 1.0 m long and 0.6 cm in diameter. Its resistance is $$\displaystyle 3.0\times { 10 }^{ -3 }\Omega $$. Another disc made of the same metal is 2.0 cm in diameter and 1.0 mm thick. What is the resistance between the round faces of the disc?
    Solution
    As, $$R=\rho l/A=\rho l/(\pi d^2/4)$$
    Resistance for a given material is directly proportional to the length and inversely proportional to the square of diameter of round faces.

    So for the second rod, diameter is $$2.0/0.6=10/3$$ times diameter of the first one.
    and, length is $$1.0mm/1m=1/1000$$ times the length of first one.

    Thus resistance of the second rod is, $$\dfrac{1/1000}{(10/3)^2}=9\times10^{-5}$$ times the resistance of the first one.

    So resistance of the second rod is $$3\times10^{-3}\times9\times10^{-5}=2.70\times10^{-7}\Omega$$

    Option B is correct.
  • Question 3
    1 / -0
    What is the voltage gain in a common emitter amplifier, when input resistance is 3 $$\Omega$$ and load resistance is 24 $$\Omega$$ with $$\beta = 60$$?
    Solution
    Given :  $$\beta = 60$$
    Input resistance $$R_1 = 3\Omega$$
    Output resistance $$R_2 = 24\Omega$$
    Voltage gain  $$A_v = \beta \times \dfrac{R_2}{R_1} = 60 \times \dfrac{24}{3} = 480$$
  • Question 4
    1 / -0
    For the combination of gates shown here, which of the following truth table part is not true?

    Solution
    Key Point Draw the truth table of the given operation and match the output with given options.
    The combination of gates is given
    For the given operation, equivalent truth table can be written as
    $$A$$$$B$$$$A\cdot B$$$$A + A\cdot B$$
    $$0$$$$1$$$$0$$$$0$$
    $$1$$$$0$$$$0$$$$1$$
    $$0$$$$0$$$$0$$$$0$$
    $$1$$$$1$$$$1$$$$1$$
    Out of the given option, option (a) can't justify the given truth table. So, option (a) is correct.

  • Question 5
    1 / -0
    The input resistance of a common emitter transistor amplifier, if the output resistance is 500 k$$\Omega$$, the current gain $$\alpha = 0.98$$ and the power gain is $$6.0625 \times 10^6$$, is
    Solution
    Power gain = Current gain $$\times$$ volume gain      .....(1)
    Voltage gain $$A_v = \beta \dfrac{R_2}{R_1}$$
    Output resistance  $$R_2 = 500\times 10^3 \ \Omega$$
    Also, current gain $$\beta = \dfrac{\alpha}{1 - \alpha} = \dfrac{0.98}{1 - 0.98} = 49$$
    $$\therefore \  A_v = (49) \left( \dfrac{500 \times 10^3}{R_1}\right )$$
    Power gain  $$ = 6.0625 \times 10^6$$  (Given)
    From (1), we get  
    $$  6.0625 \times 10^6$$ $$= 49 \times \left( \dfrac{500 \times 10^3}{R_1} \right ) \times 49$$
    $$\Rightarrow R_1 = 198 \Omega$$
  • Question 6
    1 / -0
    The following truth table corresponds to the logic gate
    ABX
    000
    011
    101
    111
    Solution
    When both the inputs are shared, the logic gate obtained is the OR gate. OR gate gives output signal as 1 when either of its input signals are 1.

  • Question 7
    1 / -0
    Which one of the following represents correctly the truth table of the configuration shown in figure?

    Solution
    In this case
    $$\displaystyle y = \bar{y} = \overline{A.B}$$
    So, it is satisfied in option (c).
  • Question 8
    1 / -0
    What the circuit represents from the equivalent circuit?

    Solution
    Output of NOR gate
    $$ y' = \overline{A+B} $$
    Output of NAND gate 
    $$ y'' = \overline{(A+B).(A+B)}$$ 
    $$ = \overline{(A+B)} \overline{(A+B)}$$ 
    $$ = (A+B) (A+B)$$
    $$ A+B $$
    Output of NOT gate 
    $$ y"" = \overline{A+B} $$
    $$ \therefore  $$ The Boolean expression is for NOR gate.
  • Question 9
    1 / -0
    Identify the mismatched pair from the following
    Solution
    For semiconductor band gap is $$<3eV$$ so given option is incorrect.
    When zener dioode is operated in breakdown region, voltge across it remains constant even if current through it changes by large amount.
    Germanium when doped with phosphorous forms n-type semiconductor and silicon when doped with aluminum forms p-type.
    p-n junction can be used as half wave or full wave rectifier.
  • Question 10
    1 / -0
    In a Zener diode regulated power supply, unregulated DC input of $$10V$$ is applied. If the resistance$$(R_s)$$ connected in series with a Zener diode is $$200\Omega$$ and the Zener voltage $$V_z=5V$$, the current across the resistance $$R_s$$ is:
    Solution
    Voltage drop across $$R_s$$ is
    $$(10-5)=5V$$
    $$\therefore I=\displaystyle\frac{V}{R_s}=\frac{5}{200}=0.025$$A
    $$=25mA$$.
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