Semiconductor Electronics: Materials, Devices and Simple Circuits Test 57

Result

Semiconductor Electronics: Materials, Devices and Simple Circuits Test 57

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Question 1
1 / -0

The diffusion current in a p-n junction is.

A
from the n-side to the p-side

B
from the p-side to the n-side

C
from the n-side to the p-side if the junction is forward-biased and in the opposite direction if it is reverse-biased

D
from the p-side to the n-side if the junction is forward-biased and in the opposite direction if it is reverse-biased.

Solution
Question 2
1 / -0

Diffusion current in a p-n junction is greater than the drift current in magnitude.

A
if the junction is forward-biased

B
if the junction is reverse-biased

C
if the junction is unbiased

D
in no case

Solution
Question 3
1 / -0

The drift current in a p-n junction is

A
from the n-side to the p-side

B
from the p-side to the n-side

C
from the n-side to the p-side if the junction is forward-biased and in the opposite direction if it is reverse-biased

D
from the p-side to the n-side if the junction is forward-biased and in the opposite direction if it is reverse-biased

Solution
Question 4
1 / -0

The $$PN$$ junction diode is used as

A
An amplifier

B
A rectifier

C
An oscillator

D
A modulator

Solution

It is used to convert $$ac$$ into $$dc$$ ( rectifier)
Question 5
1 / -0

The valence of an impurity added to germanium crystal in order to convert it into a $$P-$$ type semi conductor is

A
$$6$$

B
$$5$$

C
$$4$$

D
$$3$$

Solution

Doping is the process of adding impurities to intrinsic semiconductors to alter their properties. Normally Trivalent and Pentavalent elements are used to dope Silicon and Germanium. When an intrinsic semiconductor is doped with Trivalent impurity it becomes a P-Type semiconductor.
Question 6
1 / -0

Silicon is a semiconductor. If a small amount of As is added to it then its electrical conductivity

A
Decreases

B
Increases

C
Remains unchanged

D
Becomes zero

Solution

Impurity increases the conductivity. Hence, if a small amount of As is added to Silicon then its electrical conductivity increases.
Question 7
1 / -0

Truth table for the given circuit (figure) is

A

B

C

D

Solution

$$A$$ $$B$$ $$\bar { A } $$ $$C$$ $$D$$ $$E$$
0 0 1 0 0 0
0 1 1 0 1 1
1 0 0 0 0 0
1 1 0 0 0 1
Question 8
1 / -0

Two $$PN-$$ junctions can be connected in series by three different methods as shown in the figure. If the potential difference in the junctions is the same, then the correct connections will be

A
In the circuit (1) and (2)

B
In the circuit (2) and (3)

C
In the circuit (1) and (3)

D
Only in the circuit (1)

Solution

The potential drop across p-n junction is equal when either both the junctions are forward biased or both are reverse biased. Since in the second circuit, both the p-n junctions are reverse biased, in the third circuit, both the p-n junctions are forward biased. In the first circuit, the first junction is forward biased and second junction is reverse biased.
Question 9
1 / -0

A $$PN$$- junction has a thickness of order of

A
$$1\ cm$$

B
$$1\ mm$$

C
$$10^{-6}\ m$$

D
$$10^{-12}\ cm$$

Solution

When P- type semiconductor is mixed with N - type semiconductor, PN - junction is formed. There is very small region { which is in order of micro metre } . This region is known as depletion region. so, the thickness of $$PN -$$ junction { depletion region } is in order of $$10^{-6} m$$.
Question 10
1 / -0

A hole in a $$P-$$ type semiconductor is

A
An excess electron

B
A missing electron

C
A missing atom

D
A donor level

Solution

A hole in a $$P-$$ type semiconductor is a missing electron.