Semiconductor E...

For the given combination of gates, if the logic states of inputs A, B, C are as follows $$A = B = C = 0$$ and $$A= B = 1, C = 0$$ then the logic states of output D are

Which logic gate is represented by the following combination of logic gates:

Pure silicon crystal of length $$l (0.1m)$$ and area $$A$$($$10^{-4}m^2$$) has the mobility of electrons ($$\mu_e$$) and holes ($$\mu_h$$) as $$0.135  m^2/Vs$$ and $$0.048  m^2/Vs$$ , respectively. If the voltage applied across it is $$2V$$ and the intrinsic charge concentration is $$n_i = 1.5 \times 10^6 m^{-3}$$, then the total current flowing through the crystal is

The real time variation of input signals A and B are as shown below. If the inputs are fed into NAND gate, then select the output signal from the following

For both pure and doped silicon, calculate the probability that a state at the bottom of the silicon conduction band is occupied?

Calculate the probability that a donor state in the doped material is occupied?

The following circut represents

The following configuration of gate is equivalent to

The diagram of a logic circuit is given below. The output $$F$$ of the circuit is represented by

The equivalent resistance of the network shown across the point A and O is R and the resistance of each branch of the octagon is r. Find the value of $$\displaystyle \frac { 210R }{ 47r } $$