Semiconductor E...

Two junction diodes one of germanium $$(Ge)$$ and other of silicon $$(Si)$$ are connected as shown in figure to a battery of emf $$12\ v$$ and a load resistance $$10\ k\ \Omega$$. The germanium diode conducts at $$0.3\ V$$ and silicon diode at $$0.7\ V$$. When a current flows in the circuit, then the potential of terminal $$Y$$ will be:

With the help of the arrangement shown in figure which of the following gates could be realised?

Mobilities of electrons and holes in a sample of intrinsic germanium at room temperature are $$0.36m^2V^{-1}s^{-1}$$ and $$0.17m^2V^{-1}s^{-1}$$. The electron and hole densities are each equal to $$2.5\times 10^{19}m^3$$. The electrical conductivity of germanium is

At absolute zero of temperature, the electrical conductivity of a pure semiconductor is

In a diode detector, output circuit consist of $$R=1M\Omega \quad and\quad C=1pF$$. Calculate the carrier frequency it can detect.

If the lattice constant of this semiconductor is decreased, then which of the following is correct?

The arrangement of $$NAND$$ gates shown below effectively work as

A semiconductor X is made by doping a germanium crystal with arsenic $$(Z=33)$$. A second semiconductor Y is made by doping germanium with indium$$(Z=49)$$. The two are joined end to end and connected to a battery as shown. Which of the following statements is correct?

The electrical conductivity of a semiconductor increases when electromagnetic radiation of wavelength shorter than 2480nm is incident on it. The band gap(in eV) for the semiconductor is

There photo dlodes $$D_{1}, D_{2}$$ and $$D_{3}$$ are made of semiconductor having band gap $$2.5\ eV, 2\ eV$$ and $$3\ eV$$ respectively. Which one will be able to detect light of wavelength $$6000\ A^o$$?