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Semiconductors and Electronic Devices Test - 5

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Semiconductors and Electronic Devices Test - 5
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  • Question 1
    1 / -0.25

    Basic materials used in the present solid state electronic devices like diode, transistor, ICs, etc are

    Solution

    Explanation:Semiconductors are materials that have electrical conductivity between conductors such as most metals and nonconductors or insulators like ceramics. Semiconductor material is used in the manufacturing of electrical components and used in electronic devices such as transistors and diodes.Semiconductors are the basic materials used in the present solid state electronic devices like diode, transistor, ICs etc

  • Question 2
    1 / -0.25

    Depletion region (space charge) is formed because

    Solution

    Explanation:The depletion region, also called depletion layer, depletion zone, junction region, space charge region or space charge layer, is an insulating region within a conductive, doped semiconductor material where the mobile charge carriers have been diffused away, or have been forced away by an electric field. The only elements left in the depletion region are ionized donor or acceptor impurities.The depletion region is so named because it is formed from a conducting region by removal of all free charge carriers, leaving none to carry a current.

  • Question 3
    1 / -0.25

    The conductivity of P –type semiconductor is due to

    Solution

    A P-type semiconductor is formed when a trivalent electron deficient impurities such as boron group elements are doped with intrinsic semiconductor. As the impurities are electron deficient, they take electrons from the valence band creating a number of holes. Due this reason conductivity in P-type semiconductor is mainly due to holes rather than electrons.

  • Question 4
    1 / -0.25

    In an N-P-N transistor, P-type crystal is

    Solution

    Explanation:When the p-type crystal is grown between relatively wide sections of n-type crystals then the transistor is called NPN transistor.

     

  • Question 5
    1 / -0.25

    Domestic power supply in India is

    Solution

    Concept:

    • As per Indian standard for domestic power supply we use A.C current, which is also known as alternating current since they change its polarity at a certain interval of time.
    • Now the two principal properties of the A.C electric power supply are Voltage and frequency.
    • And we use 220 V and 50 Hz power supply for our common domestic use
    • Where 220 V is the potential difference and 50 Hz is its frequency.

    Explanation: 

    The voltage and frequency of domestic power supply used in India are 220 volt and 50 Hz respectively

  • Question 6
    1 / -0.25

    In the case of metals the valence and conduction bands have

    Solution

    Explanation:The materials can be classified by the energy gap between their valence band and the conduction band. The valence band is the band consisting of the valence electron, and the conduction band remains empty. Conduction takes place when an electron jumps from valence band to conduction band and the gap between these two bands is forbidden energy gap. Wider the gap between the valence and conduction bands, higher the energy it requires for shifting an electron from valence band to the conduction band.In the case of conductors, this energy gap is absent or in other words conduction band, and valence band overlaps each other. Thus, electron requires minimum energy to jump from valence band. The typical examples of conductors are Silver, Copper, and Aluminium.In insulators, this gap is vast. Therefore, it requires a significant amount of energy to shift an electron from valence to conduction band. Thus, insulators are poor conductors of electricity. Mica and Ceramic are the well-known examples of insulation material.Semiconductors, on the other hand, have an energy gap which is in between that of conductors and insulators. This gap is typically more or less 1 eV, and thus, one electron requires energy more than conductors but less than insulators for shifting valence band to conduction band.

  • Question 7
    1 / -0.25

    In a p-n junction, as the diffusion process continues the width of the depletion zone

    Solution

    In reverse biasing, the positive terminal of the battery is connected to the n-type whereas the negative terminal is connected to the p-type junction. So the positive terminal tends to pull the electrons (near to the depletion layer) in n-type towards itself whereas the negative terminal pulls the holes towards itself which results in an increase in the width of the depletion layer.

  • Question 8
    1 / -0.25

    An N-type Ge is obtained on doping the Ge- crystal with

    Solution

    Explanation:The addition of pentavalent impurities such as antimony, arsenic or phosphorous contributes free electrons, greatly increasing the conductivity of the intrinsic semiconductor.

  • Question 9
    1 / -0.25

    A p- type semiconductor can be obtained by adding

    Solution

    Explanation:In P-type doping, boron or gallium is the dopant. Boron and gallium each have only three outer electrons. When mixed into the silicon lattice, they form "holes "in the lattice where a silicon electron has nothing to bond to. The absence of an electron creates the effect of a positive charge, hence the name P-type.Holes can conduct current. A hole happily accepts an electron from a neighbor, moving the hole over a space. P-type silicon is a good conductor.

  • Question 10
    1 / -0.25

    In a semiconductor crystal, if current flows due to breakage of crystal bonds, then the semiconductor is called

    Solution

    In the case of an intrinsic semiconductor (say Si) where each Si is having 4 outermost electrons, its crystal structure consists of making 4 covalent bonds with 4 neighbouring Si atoms. Each bond consists of two electrons.

    Now if one of the bonds gets broken due to some reason (collisions or high temperature) then one electron gets free and it will be having sufficient energy to cross the band gap and be ready for conduction- So in intrinsic semiconductors, current flows due to breakage of crystal bonds.
     

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