Physics Test - 31

The correct answer is option 4 i.e., Marie Curie discovered Radium.

When the bandwidth is large enough to accommodate a few harmonics, the information is not lost and the rectangular signal is more or less recovered. This is so because the higher the harmonic, the less is its contribution to the waveform. Therefore, the value of the harmonic is inversely proportional to its contribution to the waveform.

SiO₂ acts as a diffusion mask permitting selective diffusions into the silicon wafer through the window etched into oxide. In other words, it is used for creating a protective SiO₂ layer on the wafer surface of the IC. Therefore, SiO₂ acts as an insulating component for integrated circuits.

Silicon is the one mainly used in the production of Integrated circuits. This is because silicon possesses many characteristics that are ideal for ICs. Silicon is used because it can be used as either an insulator or a semiconductor. This property is crucial for the manufacture of Integrated Circuits.

The maximum power rating possible for a microcircuit is 10 Watts. Integrated Circuits can’t be repaired because the individual components inside the IC are too small. As a result, the power rating for many of the IC’s doesn’t exceed quite 10 watts. It’s impossible to manufacture high power IC’s and this is often one among the most important disadvantages of Integrated Circuits.

ICs are both small in size as well as in weight. As the fabrication process is used for the integration of active and passive components on a silicon integrated circuit, the IC becomes a lot smaller. Also, due to its small size, the weight of the IC reduces, when compared to a discrete circuit.

Capacitors are not easy to fabricate on an Integrated Circuit. In fact, they are the most difficult ones to fabricate. This is because capacitors require a lot of attributes such as electromagnetic compatibility, microfabrication techniques, new magnetic materials, etc. and to integrate them, it costs a lot. Therefore, fabricating capacitors is a challenging task.

A transistor has three doped regions forming two p-n junctions between them. There are two types of transistors, namely n-p-n transistors and p-n-p transistors. In n-p-n transistors, the two segments of the n-type semiconductor are separated by a segment of p-type semiconductor, and in a p-n-p transistor, it’s just the opposite scenario.

The collector is the section on the other side of the transistor that collects the charge carriers supplied by the emitter. It is moderately doped but large in size and is always kept in reverse bias with respect to the base.

In an n-p-n transistor, as the base is very thin and lightly doped, a very few electrons from the emitter combine with the holes of the base, giving rise to base current and the electrons finally collected by the positive terminal of the battery gives rise to collector current. This base current is a small fraction of collector current depending on the shape of a transistor, thickness of the base, doping levels, and bias voltage.