Analog Electron...

The transistor in circuit shown in fig. has β = 200. Determine the value of voltage V_o for given value of V_BB.

The transistor shown in the circuit of fig. has β = 150. Determine V_o for given value of I_Q in question

For the circuit in fig. V_B = V_C and β = 50. The value of V_B is

Consider on ideal operational amplifier connected to a source feeds a load then which statement is true for Op-amp.

For the circuit shown in fig. V_CB = 0.5 V and β =100. The value of I_Q is

Compared to an amplifier (without feedback), a negative feedback amplifier having voltage series feedback will have

For the circuit shown in fig. the emitter voltage is V_E = 2 V. The value of α is

For the transistor in fig. β = 50. The value of voltage V_EC is

The current gain of the transistor shown in the circuit of fig. is β = 125. The Q-point values (I_CQ, V_CEQ) are

For the circuit in fig. , let β = 60. The value of V_ECQ is

The filter which has ripple response in pass band and flat response in stop band is

All transistor in the N output mirror in fig. are matched with a finite gain β and early voltage V_A = ∞. The expression for each load current is

Consider the basic three transistor current source in fig. Assume all transistor are matched with finite gain and early voltage V_A = ∞.The expression for I_o is

Consider the wilder current source of fig. Both of transistor are identical and β>>1 and V_BE1 = 0.7 V. The value of resistance R₁ and R_E to produce I_ref = 1 mA and I_o = 12 μA is (V_t = 0.026)

In a transitor, the value of α is 0.97. The value of current gain of common emitter configuration is

A transistor has I_B = 100 μA and I_C = 2 mA. If I_B changes by 25 μA and I_C changes by 0.6 mA, the Changes in the value of β Would be

For a transistor having α = 0.98, I_CBO = 5 μA and IB = 100 μA. The value of I_C is

For the circuit shown below, the collector to emitter voltage is

The reverse leakage current of the transistor when connected in CB configuration is 0.2 μA and it is 18 μA when the same transistor is connected in CE configuration. The value of α and β of the transistor for a base current of 30 mA will be respectively

The value of V_c for the transistor shown in figure below is

The mobility of free electrons and holes in pure germanium are 3800 and 1800 cm²/V-s respectively. The corresponding values for pure silicon are 1300 and 500 cm²/V-s, respectively. Assuming ni = 2.5 x 10¹³ cm^-3 for germanium and ni = 1.5 x 10¹⁰ cm^-3 for silicon at room temperature, the values of intrinsic conductivity for germanium and silicon are respectively given by

When an electric field is applied across a semiconductor, free electrons in it will accelerate due to the applied field, and gain energy. This energy can be lost as heat when the electrons

How does the bandgap of a material influence its suitability for use in high-frequency electronic devices?

If elements in column IV of the periodic table are placed in increasing order of their atomic number, the order will be

The density and mobility of electrons in a conductor are respectively 10²⁰/cm³ and 800 cm²/V-s. If a uniform electric field of 1 V/cm exists across this conductor, then the electron current density would be approximately