Electronic Devi...

The ideal current-voltage parameters of a MOSFET with a very small threshold voltage operating in non-saturation (triode region) is scaled by a constant k such that W, L, V_GS, V_DS, C_ox changes to kW, kL, kV_GS, kV_DS, \(\frac{{{C_{ox}}}}{k}\), respectively.

Ignoring channel length modulation, the transconductance of a MOSFET in saturation mode does not depend on:

Consider a MOS capacitor with a p-type silicon substrate doped with N_a = 10¹⁶ cm^-3, a silicon dioxide insulator with a thickness of t_ox = 20 nm and an n⁺ polysilicon gate. Assume Q’_ss = 5 × 10¹⁰ electronic charges per cm² are the trapped oxide charge and ϕ_ms = - 1.1 V, the flat-band voltage for the MOS capacitor is approximately:

(Take ϵ_ox ≈ 4 × 10^-13 F/cm )