Semiconductor Devices Test

Result

Semiconductor Devices Test - 102

Score
-
out of -
Rank
-
out of -

TIME Taken - -

SHARING IS CARING

If our Website helped you a little, then kindly spread our voice using Social Networks. Spread our word to your readers, friends, teachers, students & all those close ones who deserve to know what you know now.

Weekly Quiz Competition

Question 1
4 / -1

When plate voltage in diode valve is increased from 100 volt to 150 volt, then plate current increases from 7.5 mA to 12 mA. The dynamic plate resistance will be

A
10 k Ω

B
11 k Ω

C
15 k Ω

D
11.1 k Ω

Solution
Question 2
4 / -1

In a diode valve, the state of saturation can be obtainedeasily by

A
High plate voltage and high filament current

B
Low filament current and high plate voltage

C
Low plate voltage and high cathode temperature

D
High filament current and high plate voltage
Question 3
4 / -1

Plate resistance of two triode valves is 2 k Ω and 4 kΩ, amplification factor of each of the valves is 40. The ratio of voltage amplification, when used with 4 kΩ load resistance, will be

A
10

B
4/3

C
3/4

D
16/3

Solution
Question 4
4 / -1

Diode is used as a/an

A
Oscillator

B
Amplifier

C
Rectifier

D
Modulator
Question 5
4 / -1

Which of the following does not vary with plate or grid voltages

A
g_m

B
R_p

C
μ

D
Each of them varies
Question 6
4 / -1

The amplification factor of a triode is 18 and its plate resistance is 8 × 10³Ω. A load resistance of 10⁴Ω isconnected in the plate circuit. The voltage gain will be

A
30

B
20

C
10

D
1

Solution
Question 7
4 / -1

The slope of plate characteristic of a vacuum diode is 2 × 10^–2 mA/V. The plate resistance of diode will be

A
50 Ω

B
50 kΩ

C
500Ω

D
500 kΩ

Solution
Question 8
4 / -1

The transconductance of a triode amplifier is 2.5 mili mho having plate resistance of 20 kΩ, amplification 10. Find the load resistance

A
5 kΩ

B
25 kΩ

C
20 kΩ

D
50 kΩ

Solution
Question 9
4 / -1

A silicon specimen is made into a P–type semi-conductor by dopping, on an average, one indium atom per 5 × 10⁷ silicon atoms. If the number density ofatoms in the silicon specimen is 5 × 10²⁸ atoms/m³, then the number of acceptor atoms in silicon per cubiccentimetre will be

A
2.5 × 10³⁰ atoms/m³

B
1.0 × 10¹³ atoms/m³

C
1.0 × 10¹⁵ atoms/m³

D
2.5 × 10³⁶ atoms/m³

Solution
Question 10
4 / -1

The probability of electrons to be found in the conduction band of an intrinsic semiconductor at afinite temperature

A
Decreases exponentially with increasing band gap

B
Increases exponentially with increasing band gap

C
Decreases with increasing temperature

D
Is independent of the temperature and the band gap

Solution