Semiconductor D...

The typical ionisation energy of a donor in silicon is

In PN–junction diode the reverse saturation current is 10^–5 amp at 27°C. The forward current for a voltage of 0.2 volt is
[exp (7.62) = 2038.6, k = 1.4 × 10^–23J/K]

In the circuit, if the forward voltage drop for the diodeis 0.5 V, the current will be

P–type semiconductor has acceptor levels 57 meV above the valence band. The maximum wavelength of light required to create a hole is (Planck\'s constant h = 6.6 × 10^–34J – s)

Current in the circuit will be

The diode used in the circuit shown in the figure has a constant voltage drop of 0.5 V at all currents and a maximum power rating of 100 milliwatts. What should be the value of the resistor R, connected in series with the diode for obtaining maximum current?

In the following common emitter configuration an NPN transistor with current gain β = 100 is used. The output voltage of the amplifier will be

In semiconductor the concentrations of electrons and holes are 8 × 10¹⁸ /m³ and 5 × 10¹⁸ /m respectively. Ifthe mobilities of electrons and holes are 2.3 m²/volt –s and 0.01 m²/volt –s respectively, then semiconductor is

A sinusoidal voltage of peak value 200 volt is connected to a diode and resistor R in the circuit shown so that half wave rectification occurs. If the forward resistance of the diode is negligible compared to R the rms voltage (in volt) across R is approximately

The junction diode in the following circuit requires a minimum current of 1 mA to be above the knee point (0.7 V) of its I–V characteristic curve. The voltage across the diode is independent of current above the knee point. If V_B = 5 V, then the maximum value of R so that the voltage is above the knee point, will be