Semiconductor D...

The combination of gates shown below produces

The figure shows two NAND gates followed by a NOR gate. The system is equivalent to the following logic gate

The voltage gain of the following amplifier is

Amplification factor of a triode is 10. When the plate potential is 200 volt and grid potential is – 4 volt, then the plate current of 4 mA is observed. If plate potential is changed to 160 volt and grid potential is kept at – 7 volt, then the plate current will be

On applying a potential of –1 volt at the grid of a triode, the following relation between plate voltage V_p (volt) and plate current I_p (in mA) is found I_p = 0.125 V_p – 7.5. If on applying –3 volt potential at grid and 300 V potential at plate, the plate current is found to be 5 mA, then amplification factor of the triode is

The temperature (T) dependence on resistivity (ρ) of asemiconductor is represented by

In a forward biased PN–junction diode, the potentialbarrier in the depletion region is of the form

The current between charge density and distance near P–N junction will be

The resistance of a germanium junction diode whose V – I is shown in figure is (V_k = 0.3V )

The output in the circuit of figure is taken across a capacitor. It is as shown in figure