Semiconductor D...

Assertion A p-n junction with reverse bias can be used as a photo-diode to measure light intensity
Reason In a reverse bias condition the current is small but it is more sensitive to changes in incident light intensity

Assertion NAND or NOR gates are called digital building blocks.
Reason The repeated use of NAND (or NOR) gates can produce all the basic or complicated gates.

Assertion In common base configuration, the current gain of the transistor is less than unity.
Reason The collector terminal is reverse biased for amplification.

Assertion : In the following circuit the potential drop across the resistance is zero.
Reason The given resistance has low value.

Assertion The current gain in common base circuit is always less than one.
Reason At constant collector voltage the change in collector current is more than the change in emitter current

Assertion V-i characteristic of P-N junction diode is same as that of any other conductor.
Reason P-N junction diode behaves as conductor at room temperature

Assertion Zener diode works on a principle of breakdown voltage.
Reason Current increases suddenly after breakdown voltage.

Assertion NOT gate is also called inverter circuit.
Reason NOT gate inverts the input order.

Assertion In vacuum tubes (valves), vacuum is necessary for the movement of electrons between electrodes otherwise electrons collide with air particle and lose their energy.
Reason In semiconductors devices, external heating or vacuum is not required.