Semiconductor D...

The dominant mechanism for motion of charge carriers in forward and reverse biased silicon p-n junction are

The circuit shown in the Fig. contains two diodes each with a forward resistance of 50 Ω and with infinite backward resistance. If the battery is 6 V, the current through the 100 Ω resistance (in ampere) is

How many NAND gates are used to form AND gate

The truth table given below is for which gate?

A half-wave rectifier is being used to rectify an alternating voltage of frequency 50 Hz. The number of pulses of rectified current obtained in one second is

For the given combination of gates, if the logic states of inputs A, B, C are as follows A = B = C = 0 and A = B = 1, C = 0 then the logic states of output D are

Biaxial crystal among the following is

In a p-type semiconductor the majority carriers of current are

Which of the following when added as an impurity into the silicon produces n type semiconductor?

What accounts for the flow of charge carriers in forward and reverse biasing of silicon p-n diode?