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Semiconductor D...

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  • Question 1
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    An amplifier has voltage gain Av = 1000. The voltage gain in dB is _________ .

  • Question 2
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    A potential barrier of 0.6V exists across a P-N junction. If the depletion region is 1µm wide, what is the intensity of electric field in the region ?

  • Question 3
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    when a PN junction diode is forward biased, then the depletion region is _________ and barrier height is _________ .

  • Question 4
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    A common-emitter amplifier has a voltage gain of 100, an input impedence of 100Ω and an output impedence of 200Ω .The product of voltage gain and current gain is

  • Question 5
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    A P-N photodiode is made of a material with a band gap of 2.0ev. The minimum frequency of the radiation that can be absorbed by the material is nearly (Take hc = 1240eVnm)

  • Question 6
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  • Question 7
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    For a transistor amplifier, the voltage gain

  • Question 8
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  • Question 9
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    The manifestation of band structure in solids is due to :

  • Question 10
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    Copper and silicon material is cooled down from 600K to 400K then, resistivity of copper ________ and silicon _________ .

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