Semiconductor Devices Test

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Semiconductor Devices Test - 48

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Weekly Quiz Competition

Question 1
4 / -1

Semiconductor material having fewer free electrons than pure germanium or silicon is

A
p-type

B
n-type

C
Both (a) and (b)

D
None of the above

Solution
Question 2
4 / -1

Fermi level of energy of an intrinsic semiconductor lies

A
In the middle of forbidden gap

B
Below the middle of forbidden gap

C
Above the middle of forbidden gap

D
Outside the forbidden gap

Solution
Question 3
4 / -1

Doping of intrinsic semiconductor is done

A
To neutralize charge carriers

B
To increase the concentration of majority charge carriers

C
To make it neutral before disposal

D
To carry out further purification
Question 4
4 / -1

The addition of antimony atoms to a sample of intrinsic germanium transforms it to a material which is

A
Superconductor

B
An insulator

C
N-type semiconductor

D
P-type semiconductor
Question 5
4 / -1

Electric conduction in semiconductor takes place due to

A
Electrons only

B
Holes only

C
Both electrons and holes

D
None of the above
Question 6
4 / -1

Energy band diagrams for three semiconductor sample of silicon are as show. We can then assert that

A
Sample X is undoped while samples Y and Z have been doped with a third group and a fifth group impurity respectively

B
Sample X is undoped while both samples Y and Z have been doped with a fifth group impurity

C
Sample X has been doped with equal amounts third and fifth group impurities while samples Y and Z are undoped

D
Sample X is undoped while samples Y and Z have been doped with a fifth group and a third group impurity respectively
Question 7
4 / -1

The temperature coefficient of resistance of a semiconductor

A
Is always positive

B
Is always negative

C
Is zero

D
May be positive or negative or zero
Question 8
4 / -1

P-type semiconductor is formed when
A. As impurity is mixed in Si
B. Al impurity is mixed in Si
C. B impurity is mixed in Ge
D. P impurity is mixed in Ge

A
A and C

B
A and D

C
B and C

D
B and D
Question 9
4 / -1

In case of a semiconductor, which of the following statement is wrong?

A
Doping increase conductivity

B
Temperature coefficient of resistance is negative

C
Resistivity is in between that of a conductor and insulator

D
At absolute zero temperature, it behave like a conductor
Question 10
4 / -1

Energy bands in solids are a consequence of

A
Ohm's Law

B
Pauli's exclusion principle

C
Bohr's theory

D
Heisenberg's uncertainty principle

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Re-Attempt Weekly Quiz Competition

Semiconductor Devices Test - 48

Result

Semiconductor Devices Test - 48

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SHARING IS CARING

Question 1

p-type

n-type

Both (a) and (b)

None of the above

Solution

Question 2

In the middle of forbidden gap

Below the middle of forbidden gap

Above the middle of forbidden gap

Outside the forbidden gap

Solution

Question 3

To neutralize charge carriers

To increase the concentration of majority charge carriers

To make it neutral before disposal

To carry out further purification

Question 4

Superconductor

An insulator

N-type semiconductor

P-type semiconductor

Question 5

Electrons only

Holes only

Both electrons and holes

None of the above

Question 6

Sample X is undoped while samples Y and Z have been doped with a third group and a fifth group impurity respectively

Sample X is undoped while both samples Y and Z have been doped with a fifth group impurity

Sample X has been doped with equal amounts third and fifth group impurities while samples Y and Z are undoped

Sample X is undoped while samples Y and Z have been doped with a fifth group and a third group impurity respectively

Question 7

Is always positive

Is always negative

Is zero

May be positive or negative or zero

Question 8

A and C

A and D

B and C

B and D

Question 9

Doping increase conductivity

Temperature coefficient of resistance is negative

Resistivity is in between that of a conductor and insulator

At absolute zero temperature, it behave like a conductor

Question 10

Ohm's Law

Pauli's exclusion principle

Bohr's theory

Heisenberg's uncertainty principle

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