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Semiconductor D...

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  • Question 1
    4 / -1

    Which of the following statements is not true?

  • Question 2
    4 / -1

    In P - N junction, avalanche current flows in circuit when biasing is

  • Question 3
    4 / -1

    The depletion layer in the P-N junction region is caused by

  • Question 4
    4 / -1

    In a P-N junction diode if P region is heavily doped than n region then the depletion layer is

  • Question 5
    4 / -1

    A junction diode has a resistance of 25Ω when forward biased and 2500 Ω when reverse biased. The current in the diode, for the arrangement shown will be

  • Question 6
    4 / -1

    Zener breakdown in a semiconductor diode occurs when

  • Question 7
    4 / -1

    When forward bias is applied to a P–N junction, then what happens to the potential barrier VB and the width of charge depleted region x

  • Question 8
    4 / -1

    The potential barrier, in the depletion layer, is due to

  • Question 9
    4 / -1

    When the P end of P–N junction is connected to the negative terminal of the battery and the N end to the positive terminal of the battery, then the P – N junction behaves like

  • Question 10
    4 / -1

    A potential barrier of 0.50 V exists across a P–N junction. If the depletion region is 5.0 × 10–7 m wide, the intensity of the electric field in this region is

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