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Semiconductor D...

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  • Question 1
    4 / -1

    If no external voltage is applied across P–N junction, there would be

  • Question 2
    4 / -1

    In the middle of the depletion layer of a reverse-biased PN junction, the

  • Question 3
    4 / -1

    A crystal diode is a

  • Question 4
    4 / -1

    A bridge rectifier is shown in figure. Alternating input is given across A and C. If output is taken across BD, then it is

  • Question 5
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    No bias is applied to a P - N junction, then the current

  • Question 6
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    The width of forbidden gap in silicon crystal is 1.1 eV. When the crystal is converted into a N-type semiconductor the distance of Fermi level from conduction band is

  • Question 7
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    A semiconductor X is made by doping a germanium crystal with arsenic (Z = 33). A second semiconductor Y is made by doping germanium with indium (Z = 49). The two are joined end to end and connected to a battery as shown. Which of the following statements is correct?

  • Question 8
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    In P – N junction, the barrier potential offers resistance to

  • Question 9
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    Symbolic representation of photodiode is

  • Question 10
    4 / -1

    To make a PN junction conducting

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