Semiconductor Devices Test

Result

Semiconductor Devices Test - 67

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Weekly Quiz Competition

Question 1
4 / -1

Plate resistance of two triode valves is 2 kΩ and 4 kΩ, amplification factor of each of the valves is 40. The ratio of voltage amplification, when used with 4 kΩ load resistance, will be

A
10

B
4/3

C
3/4

D
16/3

Solution
Question 2
4 / -1

Diode is used as a/an

A
Oscillator

B
Amplifier

C
Rectifier

D
Modulator
Question 3
4 / -1

The electrical circuits used to get smooth DC output from a rectifier circuit is called

A
Filter

B
Amplifier

C
Full wave rectifier

D
Oscillator

Solution
Question 4
4 / -1

Which of the following does not vary with plate or grid voltages?

A
g_m

B
R_P

C
µ

D
Each of them varies
Question 5
4 / -1

The grid in a triode valve is used

A
To increases the thermionic emission

B
To control the plate to cathode current

C
To reduce the inter-electrode capacity

D
To keep cathode at constant potential
Question 6
4 / -1

In a triode valve the amplification factor is 20 and mutual conductance is 10^–3 mho. The plate resistance is

A
2 × 10³ Ω

B
4 × 10³ Ω

C
2 × 10⁴ Ω

D
2 × 10⁵ Ω

Solution
Question 7
4 / -1

The thermionic emission of electron is due to

A
Electromagnetic field

B
Electrostatic field

C
High temperature

D
Photoelectric effect
Question 8
4 / -1

The slope of plate characteristic of a vacuum diode is 2 × 10^–2 mA/V. The plate resistance of diode will be

A
50Ω

B
50 kΩ

C
500Ω

D
500 kΩ

Solution
Question 9
4 / -1

The probability of electrons to be found in the conduction band of an intrinsic semiconductor at a finite temperature

A
Decreases exponentially with increasing band gap

B
Increases exponentially with increasing band gap

C
Decreases with increasing temperature

D
Is independent of the temperature and the band gap

Solution
Question 10
4 / -1

The typical ionisation energy of a donor in silicon is

A
10.0 eV

B
1.0 eV

C
0.1 eV

D
0.001 eV

Solution