Semiconductor D...

In the following circuits PN-junction diodes D₁, D₂ and D₃ are ideal for the following potentials of A and B. The correct increasing order of resistance between A and B will be
(i) –10V, –5V
(ii) –5V, –10V
(iii) – 4V, –12V

The circuit shown in following figure contains two diodes D₁ and D₂ each with a forward resistance of 50 ohms and with infinite backward resistance. If the battery voltage is 6 V, the current through the 100 ohm resistance (in amperes) is

Ge and Si diodes conduct at 0.3 V and 0.7 V respectively. In the following figure if Ge diode connection is reversed, the value of V₀ changes by

In the circuit shown in figure the maximum output voltage V₀ is

In the following circuit I₁ and I₂

For the transistor circuit shown below, if β = 100, voltage drop between emitter and base is 0.7 V, then value of V_CE will be

In NPN transistor, 10¹⁰ electrons enter in emitter region in 10^–6 s. If 2% electrons are lost in base region, then collector current and current amplification factor (β) respectively are

The following configuration of gate is equivalent to