Semiconductor Devices Test

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Semiconductor Devices Test - 83

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Weekly Quiz Competition

Question 1
4 / -1

Three semiconductors are arranged in the increasing order of their energy gap as follows. The correct arrangement is

A
Tellurium, germanium, silicon

B
Tellurium, silicon, germanium

C
Silicon, germanium, tellurium

D
Silicon, tellurium, germanium
Question 2
4 / -1

The forbidden energy band gap in conductors,semiconductors and insulators are EG₁, EG₂ and EG₃respectively. The relation among them is

A
EG₁ = EG₂= EG₃

B
EG₁< EG₂3

C
EG₁> EG₂>EG₃

D
EG₁< EG₂>EG₃
Question 3
4 / -1

Which statement is correct?

A
N—type germanium is negatively charged and P—type germanium is positively charged

B
Both N—type and P—type germanium are neutral

C
N—type germanium is positively charged and P—type germanium is negatively charged

D
Both N—type and P—type germanium are negatively charged
Question 4
4 / -1

Let n_p and n_e be the number of holes and conduction electrons respectively in a semiconductor. Then,

A
n_p> n_e in an intrinsic semiconductor

B
n_p = n_e in an extrinsic semiconductor

C
n_p = n_e in an intrinsic semiconductor

D
n_p> n_e in an intrinsic semiconductor

Solution
Question 5
4 / -1

Which one of the following statements is false?

A
The resistance of intrinsic semiconductor decreases with increase of temperature

B
Pure Si doped with trivalent impurities gives a p—type semiconductor

C
Majority carriers in a n-type semiconductor are holes

D
Minority carries in a p-type semiconductor are electrons
Question 6
4 / -1

In the energy band diagram of a material shown below, the open circles and filled circles denote holes and electrons respectively. The material is

A
A p–type semiconductor

B
An insulator

C
A metal

D
An n–type semiconductor
Question 7
4 / -1

In a semiconducting material the mobilities of electrons and holes are μ_e and μ_h respectively. Which of the following is true?

A
μ_e> μ_h

B
μ_e< μ_h

C
μ_e = μ_h

D
μ_e< 0; μ_h> 0
Question 8
4 / -1

The addition of antimony atoms to a sample of intrinsicgermanium transforms it to a material which is

A
Superconductor

B
An insulator

C
N–type semiconductor

D
P–type semiconductor
Question 9
4 / -1

A semiconductor dropped with a donor impurity is

A
P–type

B
N–type

C
NPN type

D
PNP type
Question 10
4 / -1

The impurity atom added to germanium to make it N–type semiconductor is

A
Arsenic

B
Iridium

C
Aluminium

D
Iodine

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Semiconductor Devices Test - 83

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Question 1

Tellurium, germanium, silicon

Tellurium, silicon, germanium

Silicon, germanium, tellurium

Silicon, tellurium, germanium

Question 2

EG1 = EG2= EG3

EG1< EG23

EG1> EG2>EG3

EG1< EG2>EG3

Question 3

N—type germanium is negatively charged and P—type germanium is positively charged

Both N—type and P—type germanium are neutral

N—type germanium is positively charged and P—type germanium is negatively charged

Both N—type and P—type germanium are negatively charged

Question 4

np> ne in an intrinsic semiconductor

np = ne in an extrinsic semiconductor

np = ne in an intrinsic semiconductor

np> ne in an intrinsic semiconductor

Solution

Question 5

The resistance of intrinsic semiconductor decreases with increase of temperature

Pure Si doped with trivalent impurities gives a p—type semiconductor

Majority carriers in a n-type semiconductor are holes

Minority carries in a p-type semiconductor are electrons

Question 6

A p–type semiconductor

An insulator

A metal

An n–type semiconductor

Question 7

μe> μh

μe< μh

μe = μh

μe< 0; μh> 0

Question 8

Superconductor

An insulator

N–type semiconductor

P–type semiconductor

Question 9

P–type

N–type

NPN type

PNP type

Question 10

Arsenic

Iridium

Aluminium

Iodine

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EG₁ = EG₂= EG₃

EG₁< EG₂3

EG₁> EG₂>EG₃

EG₁< EG₂>EG₃

n_p> n_e in an intrinsic semiconductor

n_p = n_e in an extrinsic semiconductor

n_p = n_e in an intrinsic semiconductor

n_p> n_e in an intrinsic semiconductor

μ_e> μ_h

μ_e< μ_h

μ_e = μ_h

μ_e< 0; μ_h> 0