Semiconductor D...

In a P–type semiconductor, germanium is dopped with

A piece of semiconductor is connected in series in an electric circuit. On increasing the temperature, thecurrent in the circuit will

In extrinsic semiconductors

Resistivity of a semiconductor depends on

Although carbon, silicon and germanium have same lattice structure and four valence electrons each, their band structure leads to the energy gaps as

Pure Si at 500 K has equal number of electron (n_e) and hole (n_h) concentrations of 1.5 × 10¹⁶ m^–3. Doping byindium increases n_h to 4.5 × 10²² m^–3. The doped semiconductor is of

C and Si both have same lattice structure, having 4 bonding electrons in each. However, C is insulator where as Si is intrinsic semiconductor. This is because

In the forward bias arrangement of a PN–junction diode

A p–n photodiode is fabricated from a semiconductor with a band gap of 2.5 eV. It can detect a signal of wavelength

The reverse biasing in a PN junction diode