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Semiconductor Devices Test - 93

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Semiconductor Devices Test - 93
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  • Question 1
    4 / -1
    A transistor is operated in common-emitter configuration at Vc = 2V such that a change in the base current from 100 μA to 200 μA produces a change in the collector current from 5 mA to 10 mA. The current gain is
    Solution

  • Question 2
    4 / -1

    Solution

  • Question 3
    4 / -1
    In a PNP transistor working as a common-base amplifier, current gain is 0.96 and emitter current is 7.2mA. The base current is
    Solution

  • Question 4
    4 / -1
    In a common emitter transistor, the current gain is 80. What is the change in collector current, when the change in base current is 250 μA
    Solution

  • Question 5
    4 / -1
    The transistors provide good power amplification when they are used in
  • Question 6
    4 / -1
    For a transistor the parameter β = 99. The value of the parameter α is
    Solution

  • Question 7
    4 / -1
    For transistor action
    I. Base, emitter and collector regions should have similar size and doping concentrations
    II. The base region must be be very thin and lightly doped
    III. The emitter-base junction is forward biased and base-collector junction is reverse biased
    IV. Both the emitter-base junction as well as the base collector junction are forward biased
    Which one of the following pairs of statements is correct
  • Question 8
    4 / -1
    The most commonly used material for making transistor is
  • Question 9
    4 / -1
    An NPN-transistor circuit is arranged as shown in figure. It is

  • Question 10
    4 / -1
    The part of a transistor which is heavily doped to produce a large number of majority carriers, is
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