
Let us study the validity of each of the four statements with explanations:
Statement – A: Base, emitter, and collector regions have similar size and doping concentrations.
The Emitter, Base and Collector regions have different sizes with varying concentrations. The order of size of these regions are: Base < Emitter < Collector The order of the concentration of the regions are: Base < Collector < Emitter
Hence, these regions are doped in a different way and their sizes are also, unsimilar.
Statement – B: The base region must be very thin and lightly doped.
The base region is the thinnest region of the transistor and the electron concentration of this region, as a result, is the lowest among the three regions.
Statement – C: The emitter-base junction is forward biased and base-collector junction is reverse biased.
The emitter region has a high concentration of electrons. So, connecting them across the base will result in their movement to the base and then, the collector. To facilitate the movement of the charge carriers from emitter, the emitter-base junction is forward biased, and the base-collector junction is reverse biased so as to attract these charge carriers towards the collector region.
Statement – D: Both the emitter-base junction as well as the base-collector junction are forward biased.
If both the emitter-base and collector-base junction are forward biased, the charge carriers will not be able to cross the barrier across the base to move to the collector, thereby, decreasing or hindering the functionality of the transistor.