Semiconductor Devices Test

Result

Semiconductor Devices Test - 103

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Weekly Quiz Competition

Question 1
4 / -1

The typical ionisation energy of a donor in silicon is

A
10.0 eV

B
1.0 eV

C
0.1 eV

D
0.001 eV

Solution
Question 2
4 / -1

In PN–junction diode the reverse saturation current is 10^–5 amp at 27°C. The forward current for a voltage of 0.2 volt is
[exp (7.62) = 2038.6, k = 1.4 × 10^–23J/K]

A
2037.6 × 10^–3 amp

B
203.76 × 10^–3 amp

C
20.376 × 10^–3 amp

D
2.0376 × 10³ amp

Solution
Question 3
4 / -1

In the circuit, if the forward voltage drop for the diodeis 0.5 V, the current will be

A
3.4 mA

B
2 mA

C
2.5 mA

D
3 mA

Solution
Question 4
4 / -1

P–type semiconductor has acceptor levels 57 meV above the valence band. The maximum wavelength of light required to create a hole is (Planck\'s constant h = 6.6 × 10^–34J – s)

A
57 Å

B
57 × 10^–3Å

C
217100 Å

D
11.61 × 10^–33Å

Solution
Question 5
4 / -1

Current in the circuit will be

A

B

C

D

Solution
Question 6
4 / -1

The diode used in the circuit shown in the figure has a constant voltage drop of 0.5 V at all currents and a maximum power rating of 100 milliwatts. What should be the value of the resistor R, connected in series with the diode for obtaining maximum current?

A
1.5 Ω

B
5 Ω

C
6.67 Ω

D
200 Ω

Solution
Question 7
4 / -1

In the following common emitter configuration an NPN transistor with current gain β = 100 is used. The output voltage of the amplifier will be

A
10 mV

B
0.1 V

C
1.0 V

D
10 V

Solution
Question 8
4 / -1

In semiconductor the concentrations of electrons and holes are 8 × 10¹⁸ /m³ and 5 × 10¹⁸ /m respectively. Ifthe mobilities of electrons and holes are 2.3 m²/volt –s and 0.01 m²/volt –s respectively, then semiconductor is

A
N–type and its resistivity is 0.34 ohm–metre

B
P–type and its resistivity is 0.034 ohm–metre

C
N–type and its resistivity is 0.034 ohm–metre

D
P–type and its resistivity is 3.40 ohm–metre

Solution
Question 9
4 / -1

A sinusoidal voltage of peak value 200 volt is connected to a diode and resistor R in the circuit shown so that half wave rectification occurs. If the forward resistance of the diode is negligible compared to R the rms voltage (in volt) across R is approximately

A
200

B
100

C

D
280

Solution
Question 10
4 / -1

The junction diode in the following circuit requires a minimum current of 1 mA to be above the knee point (0.7 V) of its I–V characteristic curve. The voltage across the diode is independent of current above the knee point. If V_B = 5 V, then the maximum value of R so that the voltage is above the knee point, will be

A
4.3 k Ω

B
860 kΩ

C
4.3 Ω

D
860 Ω

Solution