Semiconductor Devices Test

Result

Semiconductor Devices Test - 53

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Weekly Quiz Competition

Question 1
4 / -1

Which of the following statements is not true?

A
The resistance of intrinsic semiconductors decrease with increase of temperature

B
Doping pure Si with trivalent impurities gives P-type semiconductors

C
The majority carriers in N-type semiconductors are holes

D
A PN-junction can act as a semiconductor diode
Question 2
4 / -1

In P - N junction, avalanche current flows in circuit when biasing is

A
Forward

B
Reverse

C
Zero

D
Excess
Question 3
4 / -1

The depletion layer in the P-N junction region is caused by

A
Drift of holes

B
Diffusion of charge carriers

C
Migration of impurity ions

D
Drift of electrons
Question 4
4 / -1

In a P-N junction diode if P region is heavily doped than n region then the depletion layer is

A
Greater in P region

B
Greater in N region

C
Equal in both region

D
No depletion layer is formed in this case
Question 5
4 / -1

A junction diode has a resistance of 25Ω when forward biased and 2500 Ω when reverse biased. The current in the diode, for the arrangement shown will be

A

B

C

D

Solution
Question 6
4 / -1

Zener breakdown in a semiconductor diode occurs when

A
Forward current exceeds certain value

B
Reverse bias exceeds certain value

C
Forward bias exceeds certain value

D
Potential barrier is reduced to zero
Question 7
4 / -1

When forward bias is applied to a P–N junction, then what happens to the potential barrier V_B and the width of charge depleted region x

A
V_B increases, x decreases

B
V_B decreases, x increases

C
V_B increases, x increases

D
V_B decreases, x decreases
Question 8
4 / -1

The potential barrier, in the depletion layer, is due to

A
Ions

B
Holes

C
Electrons

D
Both (b) and (c)
Question 9
4 / -1

When the P end of P–N junction is connected to the negative terminal of the battery and the N end to the positive terminal of the battery, then the P – N junction behaves like

A
A conductor

B
An insulator

C
A superconductor

D
A semiconductor
Question 10
4 / -1

A potential barrier of 0.50 V exists across a P–N junction. If the depletion region is 5.0 × 10^–7 m wide, the intensity of the electric field in this region is

A
1.0 × 10⁶ V/m

B
1.0 × 10⁵ V/m

C
2.0×10⁵ V/m

D
2.0 × 10⁶ V/m

Solution