Semiconductor Devices Test

Result

Semiconductor Devices Test - 54

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Question 1
4 / -1

If no external voltage is applied across P–N junction, there would be

A
No electric field across the junction

B
An electric field pointing from N-type to P-type side across the junction

C
An electric field pointing from P-type to N-type side across the junction

D
A temporary electric field during formation of P-N junction that would subsequently disappear
Question 2
4 / -1

In the middle of the depletion layer of a reverse-biased PN junction, the

A
Potential is zero

B
Electric field is zero

C
Potential is maximum

D
Electric field is maximum

Solution
Question 3
4 / -1

A crystal diode is a

A
Non-linear device

B
Amplifying device

C
Linear device

D
Fluctuating device
Question 4
4 / -1

A bridge rectifier is shown in figure. Alternating input is given across A and C. If output is taken across BD, then it is

A
Zero

B
Same as input

C
Half wave rectified

D
Full wave rectified
Question 5
4 / -1

No bias is applied to a P - N junction, then the current

A
Is zero because the number of charge carriers flowing on both sides is same

B
Is zero because the charge carriers do not move

C
Is non-zero

D
None of the above
Question 6
4 / -1

The width of forbidden gap in silicon crystal is 1.1 eV. When the crystal is converted into a N-type semiconductor the distance of Fermi level from conduction band is

A
Greater than 0.55 eV

B
Equal to 0.55 eV

C
Lesser than 0.55 eV

D
Equal to 1.1 eV
Question 7
4 / -1

A semiconductor X is made by doping a germanium crystal with arsenic (Z = 33). A second semiconductor Y is made by doping germanium with indium (Z = 49). The two are joined end to end and connected to a battery as shown. Which of the following statements is correct?

A
X is P-type, Y is N-type and the junction is forward biased

B
X is N-type, Y is P-type and the junction is forward biased

C
X is P-type, Y is N-type and the junction is reverse biased

D
X is N-type, Y is P-type and the junction is reverse biased
Question 8
4 / -1

In P – N junction, the barrier potential offers resistance to

A
Free electrons in N region and holes in P region

B
Free electrons in P region and holes in N region

C
Only free electrons in N region

D
Only holes in P region
Question 9
4 / -1

Symbolic representation of photodiode is

A

B

C

D
Question 10
4 / -1

To make a PN junction conducting

A
The value of forward bias should be more than the barrier potential

B
The value of forward bias should be less than the barrier potential

C
The value of reverse bias should be more than the barrier potential

D
The value of reverse bias should be less than the barrier potential