Semiconductor Devices Test

Result

Semiconductor Devices Test - 101

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Weekly Quiz Competition

Question 1
4 / -1

The triode constant is out of the following

A
Plate resistance

B
Amplification factor

C
Mutual conductance

D
All of these
Question 2
4 / -1

The unit of mutual conductance of a triode valve is

A
Siemen

B
Ohm

C
Ohm metre

D
Joule coulomb^–1
Question 3
4 / -1

With a change of load resistance of a triode, used as an amplifier, from 50 kilo ohms to 100 kilo ohms, its voltage amplification changes from 25 to 30. Plate resistance of the triode is

A
25 kΩ

B
75 kΩ

C
7.5 kΩ

D
2.5 kΩ

Solution
Question 4
4 / -1

The introduction of a grid in a triode valve affects plate current by

A
Making the thermionic emission easier at low temperature

B
Releasing more electrons from the plate

C
Increasing plate voltage

D
Neutralizing space charge
Question 5
4 / -1

The ripple factor in a half wave rectifier is

A
1.21

B
0.48

C
0.6

D
None of these

Solution
Question 6
4 / -1

The value of plate current in the given circuit diagram will be

A
3 mA

B
8 mA

C
13 mA

D
18 mA

Solution
Question 7
4 / -1

Coating of strontium oxide on tungsten cathode in a valve is good for thermionic emission because

A
Work function decreases

B
Work function increases

C
Conductivity of cathode increases

D
Cathode can be heated to high temperature
Question 8
4 / -1

Correct relation for triode is

A

B

C

D
None of these
Question 9
4 / -1

Following is the relation between current and charge I = AT²e^q/V_L, then value of V_L will be

A

B

C

D

Solution
Question 10
4 / -1

Which one is correct relation for thermionic emission?

A
J = AT^1/2 – e^ϕ/kT

B
J = AT²e^{–ϕ /kT}

C
J = AT^3/2e^{–ϕ /kT}

D
J = AT²e^{–ϕ /2kT}