Semiconductor Devices Test

Result

Semiconductor Devices Test - 19

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Weekly Quiz Competition

Question 1
4 / -1

In a junction diode, the direction of diffusion current is

A
from n-region to p-region

B
from p-region to n-region

C
from n-region to p-region if the junction is forward biased and vice versa if it is reverse biased

D
from p-region to n-region if the junction is forward biased and vice versa if it is reversed biased
Question 2
4 / -1

The r.m.s value of output current in a half wave rectifier is

A
I₀/π

B
I₀/2

C
I₀/√2

D
2I₀
Question 3
4 / -1

The value of current in the following diagram (fig) will be

A
0 amp

B
10^-2 amp

C
10 amp

D
0.025 amp

Solution
Question 4
4 / -1

In case of a p-n junction diode at high value of reverse bias, the current rises sharply. The value of reverse bias is known as

A
cut off voltages

B
zener voltage

C
inverse voltage

D
critical voltage
Question 5
4 / -1

The depletion layer in silicon diode is 1 μ m wide and the knee potential is 0.6 V, then the electric field in the depletion layer will be

A
zero

B
0.6 V m^–1

C
6 × 10⁴ V/m

D
6 × 10⁵ V/m

Solution
Question 6
4 / -1

Consider the junction diode is ideal. The value of current in the Fig.

A
0 A

B
10^–1 A

C
10^–2 A

D
10^–3 A
Question 7
4 / -1

Transistor parameters

A
never change

B
are not same even for transistors of the same type

C
always change

D
are always same
Question 8
4 / -1

The relationship between α and β is given by

A
α = β

B

C

D

Solution
Question 9
4 / -1

In a common emitter transistor amplifier β = 60, R₀ = 5000Ω and internal resistance of a transistor is 500 Ω. The voltage amplification of amplifier will be

A
500

B
460

C
600

D
560

Solution
Question 10
4 / -1

For a common base amplifier, the values of resistance gain and voltage gain are 3000 and 2800 respectively. The current gain will be

A
1.1

B
0.98

C
0.93

D
0.83

Solution