Semiconductor Devices Test

Result

Semiconductor Devices Test - 35

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Weekly Quiz Competition

Question 1
4 / -1

How many NAND gates are used to form AND gate ?

A
1

B
2

C
3

D
4
Question 2
4 / -1

Ripples are ________.

A
A.C. mixed with D.C

B
D.C. mixed with output

C
D.C. output

D
A.C. output
Question 3
4 / -1

In an P.N.P transistor circuit, the collector current is 10 mA. If 90% of the electrons emitted reach the collector :

A

B

C

D

Solution
Question 4
4 / -1

When a P-type semi-conductor is heated :

A
Number of holes increases while that of electrons decreases

B
Number of electron increases while that of hole decreases

C
Number of electrons and holes remains same

D
Number of electrons and holes increases equally
Question 5
4 / -1

The depletion layer in PN junction diode is caused by

A
Drift of holes

B
Diffusion of impurity ions

C
Diffusion of charge carriers

D
Drift of electrons
Question 6
4 / -1

The active junction area in a solar cell is ________ as we want ________ power

A
Small, more

B
Small, small

C
Large, more

D
Large, small
Question 7
4 / -1

The forbidden energy band gap in semi-conductor, conductor and insulator are E₁, E₂ and E₃ respectively. The relation among then is :

A

B

C

D
Question 8
4 / -1

In a common emitter amplifier, output resistance is 5000Ω and input resistance is 1000Ω. If peak value of signal voltage is 1 mV and β =100 , then the peak value of output voltage is _______

A
0.1V

B
0.3V

C
0.2V

D
0.5V
Question 9
4 / -1

The A.C. current gain of a transistor is 100. If the base current changes by 100µA, What is the charge in collector current ?

A
20 mA

B
30 mA

C
10 mA

D
10 µA
Question 10
4 / -1

In Ge sample, traces of gallium are added as impurity. The resultant sample would behave like :

A
A conductor

B
A P-type semiconductor

C
An N-type semiconductor

D
An insulator