Semiconductor D...

Figure gives a system of logic gates. From the study of truth table it can be found that to produce a high output (1) at R, we must have

The combination of gates shown below produces

The figure shows two NAND gates followed by a NOR gate. The system is equivalent to the following logic gate

The diagram of a logic circuit is given below. The output F of the circuit is represented by

The plate current i_p in a triode valve is given i_p = K(V_p + µV_g)^3/2, where i_p is in milliampere and V_p and V_g are in volt. If r_p =10⁴ ohm and g_m = 5 × 10^–3 mho, then for i_p = 8 mA and V_p = 300 volt, what is the value of K and grid cut off voltage?

The linear portions of the characteristic curves of a triode valve give the following readings
The plate resistance is

The relation between dynamic plate resistance (r_p) of a vacuum diode and plate current in the space charge limited region, is

An alternating voltage of 141.4 V (rms) is applied to a vacuum diode as shown in the figure. The maximum potential difference across the condenser will be

A metallic surface with work function of 2 eV, on heating to a temperature of 800 K gives an emission current of 1 mA. If another metallic surface having the same surface area, same emission constant but work function 4 eV is heated to a temperature of 1600 K, then the emission current will be

A change of 0.8 mA in the anode current of a triode occurs when the anode potential is changed by 10 V. If µ = 8 for the triode, then what change in the grid voltage would be required to produce a change of 4 mA in the anode current