Semiconductor Devices Test

Result

Semiconductor Devices Test - 91

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Weekly Quiz Competition

Question 1
4 / -1

To make a PN junction conducting

A
The value of forward bias should be more than the barrier potential

B
The value of forward bias should be less than the barrier potential

C
The value of reverse bias should be more than the barrier potential

D
The value of reverse bias should be less than the barrier potential
Question 2
4 / -1

Which is the wrong statement in following sentences? A device in which P and N–type semiconductors are used is more useful than a vacuum type because

A
Power is not necessary to heat the filament

B
It is more stable

C
Very less heat is produced in it

D
Its efficiency is high due to a high voltage across the junction
Question 3
4 / -1

A p–n photodiode is made of a material with a band gap of 2.0 eV. The minimum frequency of the radiation that can be absorbed by the material is nearly

A
1 × 10¹⁴ Hz

B
20 × 10¹⁴ Hz

C
10 × 10¹⁴ Hz

D
5 × 10¹⁴ Hz

Solution
Question 4
4 / -1

The current through an ideal PN–junction shown in the following circuit diagram will be

A
Zero

B
1 mA

C
10 mA

D
30 mA
Question 5
4 / -1

If a full wave rectifier circuit is operating from 50 Hz mains, the fundamental frequency in the ripple will be

A
50 Hz

B
70.7 Hz

C
100 Hz

D
25 Hz
Question 6
4 / -1

If in a p – n junction diode, a square input signal of 10 V is applied as shown

A

B

C

D
Question 7
4 / -1

A reverse biased diode is

A

B

C

D

Solution
Question 8
4 / -1

Currents flowing in each of the circuits A and Brespectively

A
1 A, 2 A

B
2 A, 1 A

C
4 A, 2 A

D
2 A, 4 A

Solution
Question 9
4 / -1

In the following circuit, the current flowing through1 kΩ resistor is

A
0 mA

B
5 mA

C
10 mA

D
15 mA

Solution
Question 10
4 / -1

Assuming the diodes to be of silicon with forward resistance zero, the current Iin the following circuit is

A
0

B
9.65 mA

C
10 mA

D
10.36 mA

Solution