Solid State Test

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Solid State Test - 16

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Question 1
1 / -0

Assertion : Semiconductors are solids with conductivities in the intermediate range from \(10^{–6} – 10^4 ohm^{–1}m^{–1}\) .

Reason : Intermediate conductivity in semiconductor is due to partially filled valence band.

A
Assertion and reason both are correct statements and reason is correct explanation for assertion.

B
Assertion and reason both are correct statements but reason is not correct explanation for assertion.

C
Assertion is correct statement but reason is wrong statement

D
Assertion is wrong statement but reason is correct statement.

Solution

Intermediate conductivity in semiconductor is due to small energy gap between valence band and conduction band.Therefore , Assertion is correct , but the reason is wrong .
Question 2
1 / -0

Which of the following is not true about the ionic solids?

A
Bigger ions form the close packed structure.

B
Smaller ions occupy either the tetrahedral or the octahedral voids depending upon their size

C
Occupation of all the voids is not necessary.

D
The fraction of octahedral or tetrahedral voids occupied depends upon the radii of the ions occupying the voids.

Solution

The fraction of octahedral or tetrahedral voids occupied depends upon the radii of the ions present at the lattice points. As we know the radii of octahedral or tetrahedral void is related to radii of atoms (r) as Radius of octahedral void \((R_0)\) = 0.414 r .
Radius of tetrahedral void \((R_1)\) = 0.225 r Where, r = radius of bigger atom involved.
Question 3
1 / -0

A ferromagnetic substance becomes a permanent magnet when it is placed in a magnetic field because ............

A
All the domains get oriented in the direction of magnetic field.

B
All the domains get oriented in the direction opposite to the direction of magnetic field.

C
Domains get oriented randomly

D
Domains are not affected by magnetic field.

Solution

Ferromagnetic solids can be permanently magnetised and then all the domains get oriented in the direction of applied magnetic field.
Question 4
1 / -0

The correct order of the packing efficiency in different types of unit cells is

A
fcc< bcc< simple cubic

B
fcc> bcc> simple cubic

C
fcc< bcc> simple cubic

D
bcc< fcc> simple cubics

Solution

Packing efficiency in different types of unit cells can be tabulated as

Unit Cel Packing Efficiancy

fcc 74%

bcc 68%

Simple Cubic 52.4

This follows the order: fcc > bcc > simple cubic
Question 5
1 / -0

Which of the following defects is also known as dislocation defect?

A
Frenkel defect

B
Schottky defect

C
Non-stoichiometric defect

D
Simple interstitial defect

Solution

In Frenkel defect, some cations occupy interstitial site and hence it is also called dislocation defect.
Question 6
1 / -0

In the cubic close packing, the unit cell has ...........

A
4 tetrahedral voids each of which is shared by four adjacent unit cells.

B
4 tetrahedral voids within the unit cell

C
8 tetrahedral voids each of the which is shared by four adjacent unit cells.

D
8 tetrahedral voids within the unit cells.

Solution

We know that in ccp structure there are 4 atoms per unit cell. The number of tetrahedrral voids is twice the number of atoms (ie. eight tetrahedral voids per unit cell of cubic closed packing.
Question 7
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Which of the following represents correct order of conductivity in solids?

A
(i) \(K_{metals}>>K_{insulators}<K_{semiconductors}\)

B
\(K_{metals}<<K_{insulators}<K_{semiconductors}\)

C
\(K_{metals} \cong K_{semiconductors}>K_{insulators} = zero\)

D
\(K_{metals}<K_{semiconductors}>K_{insulators} \neq zero \)

Solution

Conductivity of metal, insulator and semiconductors can be represented in the term of k. (Kappa) which depednds upon energy gap beween valence band and conduction band.
Question 8
1 / -0

Which of the following oxides behaves as conductor or insulator depending upon temperature?

A
\(TiO\)

B
\(SiO_2\)

C
\(TiO_3\)

D
\(MgO\)

Solution

Certain metal oxides like VO ,\( VO_2\) , \(VO_3\) and \(TiO_3\) show either metallic or insulating properties depending upon temperature.

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Unit Cel	Packing Efficiancy
fcc	74%
bcc	68%
Simple Cubic	52.4

Solid State Test - 16

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Solid State Test - 16

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Question 1

Assertion and reason both are correct statements and reason is correct explanation for assertion.

Assertion and reason both are correct statements but reason is not correct explanation for assertion.

Assertion is correct statement but reason is wrong statement

Assertion is wrong statement but reason is correct statement.

Solution

Question 2

Bigger ions form the close packed structure.

Smaller ions occupy either the tetrahedral or the octahedral voids depending upon their size

Occupation of all the voids is not necessary.

The fraction of octahedral or tetrahedral voids occupied depends upon the radii of the ions occupying the voids.

Solution

Question 3

All the domains get oriented in the direction of magnetic field.

All the domains get oriented in the direction opposite to the direction of magnetic field.

Domains get oriented randomly

Domains are not affected by magnetic field.

Solution

Question 4

fcc< bcc< simple cubic

fcc> bcc> simple cubic

fcc< bcc> simple cubic

bcc< fcc> simple cubics

Solution

Question 5

Frenkel defect

Schottky defect

Non-stoichiometric defect

Simple interstitial defect

Solution

Question 6

4 tetrahedral voids each of which is shared by four adjacent unit cells.

4 tetrahedral voids within the unit cell

8 tetrahedral voids each of the which is shared by four adjacent unit cells.

8 tetrahedral voids within the unit cells.

Solution

Question 7

(i) \(K_{metals}>>K_{insulators}<K_{semiconductors}\)

\(K_{metals}<<K_{insulators}<K_{semiconductors}\)

\(K_{metals} \cong K_{semiconductors}>K_{insulators} = zero\)

\(K_{metals}<K_{semiconductors}>K_{insulators} \neq zero \)

Solution

Question 8

\(TiO\)

\(SiO_2\)

\(TiO_3\)

\(MgO\)

Solution

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