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Electronic Devices Test -11

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Electronic Devices Test -11
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  • Question 1
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    The depletion layer in the p-n junction is caused due to

  • Question 2
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    When a p-n junction is reversed biased, the flow of current across the junction is mainly due to

    Solution

    P-N junction diode allows the minority charge carriers. The positive terminal of the battery pushes the holes (minority carriers) towards the p-type semiconductor. In the similar way, negative terminal of the battery pushes the free electrons (minority carriers) towards the n-type semiconductor.
    The positive charge carriers (holes) which cross the p-n junction are attracted towards the negative terminal of the battery. On the other hand, the negative charge carriers (free electrons) which cross the p-n junction are attracted towards the positive terminal of the battery. Thus, the minority charge carriers carry the electric current in reverse biased p-n junction diode.

  • Question 3
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    At absolute zero, Si acts as:

    Solution

    The resistance of silicon (a semiconductor) increases on decrease of temperature. At absoute zero, it will behave like an insulator.

  • Question 4
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    The difference in variation of resistance with temperature in a metal and semiconductor is due to

    Solution

    In crystalline solids, atoms are arranged in a definite geometrical shape. They are anisotropic i.e. their physical properties such as thermal conductivity/resistance is different in different directions.

  • Question 5
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    The energy band gap is maximum in:

  • Question 6
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    Suitable impurities are added to a semiconductor depending upon its use. This is done to

    Solution

    Conductivity of intrinsic semiconductors is increased by adding an appropriate amount of suitable impurity. This process is called doping.

  • Question 7
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    In case of diamond, the forbidden gap is about

    Solution

    In case of insulating material, there exists a large forbidden gap in between the conduction band and the valence band. The forbidden gap is very wide, approximately greater than 3 eV in insulators. For a diamond, which is an insulator, the forbidden gap is about 6 eV.

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