Semiconductor E...

The material used in solar cells contains

When a diode is heavily doped the 

The number of particles crossing unit area perpendicular to X-axis in unit time is given by $$ \dfrac { D\left( n_ 2-n_ 1 \right)  }{ \left( x_ 2-x_ 1 \right)  }  $$ where $$ n_1 and n_2 $$ are number of particle per unit volume respectively at and $$ x_2 $$ The dimension of the diffusion constant D are

A light emitting diode (LED) has a voltage drop of 2 V across it and passes a current of 10 mA. When it operates with a 6 V battery through a limiting resistor R, the value of R is 

The mobility of hole in a semiconductor depend on

If potential $$V=100\pm0.5$$Volt and current $$I=10\pm0.2$$ amp are given to us, then what will be the value of resistance

For detecting intensity of light we use

In PN-junction diode the reverse saturation current is $$10 ^ { - 5 }$$ amp at $$27 ^ { \circ } C$$. The forward current for a voltage of 0.2 volt is

Two identical p-n junction may be connected in series with a battery in three ways as shown in the, adjoining figure. The potential drop across the p-n junctions are equal in 

The intrinsic charge carrier density in germanium crystal at $$ 300 K is 2.5 \times 10^{13} / cm^3 $$. density in an n-type germanium crystal at 300 K be $$ 5 \times 10^{16} /cm^3 $$,the hole density in this n-type crystal at 300 K would be