Semiconductor E...

Which of the following statements is true for a p-n-p transistor when used in an amplifier circuit ?

The combination of gates shown below yields.

The relation between dynamic plate resistance $$\left( r _ { p } \right)$$ of a vacuum diode and plate current in the space charge limited region, is 

A gate in which all the inputs must be low to get a high output is called

The input signals at NAND gate is given below

The given figure shows the waveforms for three inputs $$A,B $$ and $$C$$ and that for the output $$Y$$ of a logic circuit. The logic circuit is  

In a P-N  junction, a potential barrier exists across the function. A hole with kinetic energy of 300 meV *approaches the junction Find the kinetic energy of the hole it crosses the junction it the hole approached  the Junction from the p-side and

The magnitude of the force between a pair of conductors, each of length 110 cm, carrying a current of 10 A and separated by a distance of 10 cm is

A wire of resistance 'R' is cut into four equal parts and they are bundled together side by side to form a thicker wire. The resistance of the bundle is

With the rise of temperature, the specific resistance of semiconductor?