Semiconductor Electronics: Materials, Devices and Simple Circuits Test 56

Result

Semiconductor Electronics: Materials, Devices and Simple Circuits Test 56

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Question 1
1 / -0

A triode is operated in the linear region of its characteristics. If the plate voltage is slightly increased, the dynamic plate resistance will

A
increase

B
decrease

C
remain almost the same

D
become zero.

Solution
Question 2
1 / -0

The saturation current in a triode valve can be changed by changing

A
the grid voltage

B
the plate voltage

C
the separation between the grid and the cathode

D
the temperature of the cathode.

Solution
Question 3
1 / -0

The plate current in a triode valve is maximum when the potential of the grid is

A
positive

B
zero

C
negative

D
nonpositive

Solution
Question 4
1 / -0

Choose the correct option for the forward biased characteristics of a $$p-n$$ junction:

A

B

C

D

Solution
Question 5
1 / -0

In a $$p-n$$ junction diode, holes diffuse from the $$p-$$ region to the $$n-$$ region because:

A
the free electrons in the $$n-$$ region attract them

B
the are swept across the junction by the potential difference

C
there is greater concentration of holes in the $$p-$$ region as compared to $$n-$$ region

D
none of the above

Solution
Question 6
1 / -0

Because of the space charge in a diode valve,

A
the plate current decreases

B
the plate voltage increases

C
the rate of emission of thermions increases

D
the saturation current increases.

Solution

A diode valve consists of a negatively charged region between the cathode and the anode, which is known as space region. his negatively charged region repels the electrons coming from cathode and thus it reduces the plate current.

On the other hand this region has no effect on plate voltage, rate of emission of thermions and saturation current.
Hence option A
Question 7
1 / -0

When the diode shows saturated current, dynamic plate resistance is

A
zero

B
infinity

C
indeterminate

D
different for different diodes.

Solution
Question 8
1 / -0

In case of $$p-n$$ junction diode at high value of reverse bias, current rises sharply. The value of reverse bias is called:

A
cut off voltage

B
inverse voltage

C
zener voltage

D
critical voltage

Solution
Question 9
1 / -0

A semiconducting device is connected in a series circuit with a battery and a resistance. A current is found to pass through the circuit. If the polarity of the battery is reversed, the current drops to almost zero. The device may be

A
an intrinsic semiconductor

B
a p-type semiconductor

C
an n-type semiconductor

D
a p-n junction.

Solution

A p-n junction diode has extremely high resistance in one direction (reverse-bias) and extremely low resistance (forward-bias) in the opposite direction. This happens because the depletion layer opposes the flow of current through the semiconductor in the reverse bias.
Question 10
1 / -0

A hole diffuses from the p-side to the n-side in a p-n junction. This means that.

A
a bond is broken on the n-side and the electron freed from the bond jumps to the conduction band

B
a conduction electron on the p-side jumps to a broken bond to complete it

C
a bond is broken on the n-side and the electron freed from the bond jumps to a broken bond on the p-side to complete it

D
a bond is broken on the nide and the electron freed from the bond jumps to a broken bond on the n-side to complete it.

Solution