Power Electroni...

Which of the following statement is true regarding power MOSFET and BJT?

In a power MOSFET, as the gate to source voltage is increased beyond the threshold voltage, the thickness of depletion layer is

Consider the following statements with regard to a GTO:

1. The turn-off gain of the GTO is large.

2. Large negative gate current pulses are required to turn off the GTO.

3. GTO has a large reverse blocking capability.

The reverse recovery time of a diode is t_rr = 3 μs and the rate of fall of the diode current is \(\frac{{di}}{{dt}} = 30\;A/\mu s\). The storage charge Q_RR and the peak inverse current I_RR will be respectively

Consider the following statements:

(1) IGBT has low input impedance compared to PMOSFET

(2) IGBT and PMOSFET are both voltage controlled devices.

(3) IGBT can be designed for higher voltages compared to PMOSFETS.

(4) IGBT converters are more costly and bigger in size compared to BJT converters.

The correct statements are:

A MOSFET rated for 20 A, carries a periodic current expressed as \(i\left( t \right) = \left\{ {\begin{array}{*{20}{c}}{15,\;\;0 < t < \frac{T}{4}}\\{0,\;\;\frac{T}{4} < t < T}\end{array}} \right.\).  The on-state resistance of the MOSFET is 0.25 Ω. The average on-state power loss of device for four cycles is ________ (in W)