Electronic Devi...

Given the effective masses of holes and electrons in silicon respectively as:

\(m_p^ \star = 0.56\;{m_0}\;and\;m_n^ \star = 1.08\;{m_0}\)

What will be the position of the intrinsic Fermi energy level with respect to the center of the bandgap for the semiconductor at T = 300 K?

(The Thermal voltage at 300 K is given as 26 mV)

Assume Si with completely ionized dopants. If doping density, N_D = 5.00 × 10¹⁶ cm³ , N_A = 0 and T = 700 K, then the electron concentration in conduction Band (n) is __________ × 10¹⁶ cm^-3

(Assume n_i (700 K) = 2.865 × 10¹⁶ cm^-3)

Consider Silicon at T = 300 K with doping concentrations of N_d = 10¹⁴ cm^-3 and N_a = 0. What will be the position of Fermi energy level with respect to the intrinsic Fermi level for the given doping concentrations?

Gallium arsenide at T = 300 K with an intrinsic concentration of 1.8 × 10⁶ cm^-3 contains acceptor impurity atoms at a density of 10¹⁵ cm^-3. Additional impurity atoms are to be added so that the Fermi level is 0.45 eV below the intrinsic level. The concentration and the type of additional impurity atoms will be respectively:

A sample of silicon at T = 300 K is doped with boron at a concentration of 1.5 × 10¹⁵ cm^-3 and with arsenic at a concentration of 8 × 10¹⁴ cm^-3. The intrinsic carrier concentration of Si at T = 300 K is 10¹⁰ cm^-3. The material is

A semiconductor has a direct band gap of 2.5 eV. Of the incident light wavelengths given below, the one that cannot be absorbed is (Take h = 6.626 × 10^-34, q = 1.6 × 10^-19C)