Electronic Devi...

Under the application of bias in a typical p-n junction structure, the hole current contribution is around 40% of the total current. As a designer, what will you do to increase this hole current contribution to 80%?

Two p-n junction diodes D₁ and D₂ are identical in all respects except that the width of the n-region in D₂ is double that in D₁. If the current in D₁ is 1 mA at a forward bias of 0.6 V, the current in D₂ at 0.625 V bias will be_________ (in mA).

(Take V_T = 25 mV)

The correct statement regarding depletion and diffusion capacitance is

i) Depletion capacitance is dominant in reverse-bias voltage

ii) Diffusion capacitance is dominant in reverse-bias voltage

iii) The diffusion capacitance is due to stored charge of minority electrons and minority holes near the depletion region

iv) Depletion capacitance is directly proportional to width of depletion region

A silicon n⁺p junction is biased at V_R = 10 V. The doping in the p region increasing by a factor of 2. Neglecting the change in built-in potential, the percent change in the junction capacitance will be (correct up to two decimal places) ______.

Two p-n junction diodes D₁ and D₂ are identical in all respects except that D₁ is made up of wider bandgap material than D₂. The reverse saturation current will be minimum for: