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Electronic Devi...

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  • Question 1
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    The leakage current of a transistor with usual notation are ICEO = 410 μA, ICBO = 5 μA, and IB = 30μA. Calculate the IC ________mA (Correct up to two decimal places)

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    A Si pnp BJT with NAE = 5 × 1017/cm3, NDB = 1015/cm3, NAC = 1014/cm3 and WB (Neutral Base Width) = 3 μm is maintained under equilibrium conditions at room temperature.

    The magnitude of the net potential difference (in volt) between the collector and emitter is ______ V. (Correct up to 2 decimal places)

    Take VT = 26 mV

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