Electronic Devi...

The process of extension of a single crystal surface by growing a film in such a way that the added atoms form a continuation of the single-crystal structure is called

The wavelength of emitted radiation by an electron while transferring from one energy state of -15eV to other state of -5eV is approximately (in nanometer)

To grow 1μm thick SiO₂ layer on the Si Wafer which of the following process is preferable ?

The short circuit current delivered by a 10 cm × 10 cm photocell (with 100% Quantum efficiency) illuminated by monochromatic light of 400 nm wavelength with a power density of 1000 W/m² is _________.

In Twin-tub process of CMOS fabrication following steps are involved

i. Gate and Field Oxide

ii. Metallization

iii. N-well and P-well formation

iv. Source and Drain implantation

A Si solar cell 2 cm × 2 cm with I_th = 32 nA has optical generation vote of EHP/cm³ as 10¹⁸ and L_P = L_n = 2 μm. If the depletion width is 1 μm, the open circuit voltage V_oc of the solar cell is ______ V.

Take V_T = 0.0259 V

A silicon semiconductor slab has absorption coefficient of 10² cm^-1 at wavelength of 1 μm. If 90% of the incident flux is to be absorbed then the thickness of the slab required is:

When a photon is incident on a semiconductor material it excites on electron from the valence band to conduction band. During this transition some of the energy is wasted in the form of heat. An ideal photodiode is made of a material with a bandgap energy of 2.35 eV.

It operates at 300 K and is illuminated by monochromatic light with wave length of 400 nm. The maximum efficiency is __________%