Semiconductor Devices Test

Result

Semiconductor Devices Test - 22

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Weekly Quiz Competition

Question 1
4 / -1

The dominant mechanism for motion of charge carriers in forward and reverse biased silicon p-n junction are

A
drift in forward bias, diffusion in reverse bias

B
diffusion in forward bias, drift in reverse bias

C
diffusion in both forward and reverse bias

D
drift in both forward and reverse bias
Question 2
4 / -1

The circuit shown in the Fig. contains two diodes each with a forward resistance of 50 Ω and with infinite backward resistance. If the battery is 6 V, the current through the 100 Ω resistance (in ampere) is

A
zero

B
0.02

C
0.03

D
0.036

Solution
Question 3
4 / -1

How many NAND gates are used to form AND gate

A
1

B
2

C
3

D
4
Question 4
4 / -1

The truth table given below is for which gate?

A
XOR

B
OR

C
AND

D
NAND

Solution
Question 5
4 / -1

A half-wave rectifier is being used to rectify an alternating voltage of frequency 50 Hz. The number of pulses of rectified current obtained in one second is

A
50

B
25

C
100

D
200
Question 6
4 / -1

For the given combination of gates, if the logic states of inputs A, B, C are as follows A = B = C = 0 and A = B = 1, C = 0 then the logic states of output D are

A
0, 0

B
0, 1

C
1, 0

D
1, 1

Solution
Question 7
4 / -1

Biaxial crystal among the following is

A
Calcite

B
Quartz

C
Selenite

D
Tourmaline
Question 8
4 / -1

In a p-type semiconductor the majority carriers of current are

A
Holes

B
Electrons

C
Protons

D
Neutrons
Question 9
4 / -1

Which of the following when added as an impurity into the silicon produces n type semiconductor?

A
P

B
Al

C
B

D
MG
Question 10
4 / -1

What accounts for the flow of charge carriers in forward and reverse biasing of silicon p-n diode?

A
Drift in both reverse and forward bias

B
Drift in forward bias and diffusion in reverse bias

C
Drift in reverse bias and diffusion in forward bias

D
Diffusion in both forward and reverse bias