Semiconductor Devices Test

Result

Semiconductor Devices Test - 38

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Weekly Quiz Competition

Question 1
4 / -1

An amplifier has voltage gain A_v = 1000. The voltage gain in dB is _________ .

A
20 dB

B
30 dB

C
3 dB

D
60 dB

Solution
Question 2
4 / -1

A potential barrier of 0.6V exists across a P-N junction. If the depletion region is 1µm wide, what is the intensity of electric field in the region ?

A

B

C

D

Solution
Question 3
4 / -1

when a PN junction diode is forward biased, then the depletion region is _________ and barrier height is _________ .

A
Reduced, increases

B
Widened, reduced

C
Reduced, reduced

D
Increased, increased
Question 4
4 / -1

A common-emitter amplifier has a voltage gain of 100, an input impedence of 100Ω and an output impedence of 200Ω .The product of voltage gain and current gain is

A
1000

B
3000

C
5000

D
500
Question 5
4 / -1

A P-N photodiode is made of a material with a band gap of 2.0ev. The minimum frequency of the radiation that can be absorbed by the material is nearly (Take hc = 1240eVnm)

A

B

C

D

Solution
Question 6
4 / -1

A
0.003mA

B
0.66mA

C
0.015mA

D
0.03mA
Question 7
4 / -1

For a transistor amplifier, the voltage gain

A
Remains constant for all frequencies

B
Is high at high and low frequencies and constant in the mid-frequency range

C
Is low at high and low frequencies and constant in the mid-frequency range

D
None of the above

Solution
Question 8
4 / -1

A
1, 0, 1, 1

B
0, 1, 0, 0

C
0, 1, 0, 1

D
1, 1, 1, 0

Solution
Question 9
4 / -1

The manifestation of band structure in solids is due to :

A
Heisenberg's uncertainty principle

B
Pauli's exclusion principle

C
Bohr's correspondence principle

D
Boltzmann's low
Question 10
4 / -1

Copper and silicon material is cooled down from 600K to 400K then, resistivity of copper ________ and silicon _________ .

A
Increases, decreases

B
Decreases, increases

C
Decreases, decreases

D
Increases, increases