Semiconductor Devices Test

Result

Semiconductor Devices Test - 69

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Weekly Quiz Competition

Question 1
4 / -1

In the following circuits PN-junction diodes D₁, D₂ and D₃ are ideal for the following potentials of A and B. The correct increasing order of resistance between A and B will be
(i) –10V, –5V
(ii) –5V, –10V
(iii) – 4V, –12V

A
(i) < (ii) < (iii)

B
(iii) < (ii) < (i)

C
(ii) = (iii) < (i)

D
(i) = (iii) < (ii)

Solution
Question 2
4 / -1

The circuit shown in following figure contains two diodes D₁ and D₂ each with a forward resistance of 50 ohms and with infinite backward resistance. If the battery voltage is 6 V, the current through the 100 ohm resistance (in amperes) is

A
Zero

B
0.024

C
0.03

D
0.036

Solution
Question 3
4 / -1

A
0.25 A

B
0.45 A

C
0.56 A

D
0.64 A

Solution
Question 4
4 / -1

A
6 : 5

B
5 : 6

C
3 : 2

D
2 : 3

Solution
Question 5
4 / -1

Ge and Si diodes conduct at 0.3 V and 0.7 V respectively. In the following figure if Ge diode connection is reversed, the value of V₀ changes by

A
0.2 V

B
0.4 V

C
0.6 V

D
0.8 V

Solution
Question 6
4 / -1

In the circuit shown in figure the maximum output voltage V₀ is

A
0 V

B
5 V

C
10 V

D

Solution
Question 7
4 / -1

In the following circuit I₁ and I₂

A
0, 0

B
5 mA, 5 mA

C
5 mA, 0

D
0, 5 mA

Solution
Question 8
4 / -1

For the transistor circuit shown below, if β = 100, voltage drop between emitter and base is 0.7 V, then value of V_CE will be

A
10 V

B
5 V

C
13 V

D
0 V

Solution
Question 9
4 / -1

In NPN transistor, 10¹⁰ electrons enter in emitter region in 10^–6 s. If 2% electrons are lost in base region, then collector current and current amplification factor (β) respectively are

A
1.57 mA, 49

B
1.92 mA, 70

C
2 mA, 25

D
2.25 mA, 100

Solution
Question 10
4 / -1

The following configuration of gate is equivalent to

A
NAND

B
XOR

C
OR

D
None of these

Solution